urn-on and turn-off gate losses. Most of the power is in the MOSFET gate driver. Gatedrive losses are frequency dependent and are also a function of the gate capacitance of the MOSFETs. When turning the MOSFET on and off, the higher the switching frequency, the higher the gate-drive losses. This is another reason why efficiency goes down as the switching frequency goes up.
面试官问的面试题:CVTE电源工程师面试题
(1)说说你的项目,你具体负责那一块?
(2)说说比较器和放大器的区别?
(3)过零检测与软件过零有何优缺点?
1、mos的米勒平台是如何形成的?
2、开关为什么一般选用MOS而不是三极管?mos与三极管的区别
3、比较器与放大器的区别
cvte电源工程师面试题
1、mos的米勒平台是如何形成的?
2、开关为什么一般选用MOS而不是三极管?mos与三极管的区别
3、比较器与放大器的区别
技术1面,电话面试,问运算放大器的基本特性:虚短虚断,问正弦逆变电源的mos管开关周期,问趋肤效应什么意思。
面试官问的面试题:CVTE电源工程师面试题
问运算放大器的基本特性:虚短虚断,问正弦逆变电源的mos管开关周期,问趋肤效应什么意思。
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